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Abstract: This work presents the development and validation of a high-power two-level converter using the latest 3.3 kV silicon carbide (SiC) module, in the 100 mm × 140 mm half-bridge package, aiming ...

Abstract: Compared to silicon (Si), silicon carbide (SiC) is a promising and more suitable material for higher power semiconductors. Since SiC has a wider bandgap than silicon, it can achieve stable ...