The 300mm silicon carbide wafer targets higher production capacity for power electronics and advanced system integration.

There has been much research on the fabrication of nanochannels using local oxidation and consequent etching of silicon surfaces. Although this technique has been extensively demonstrated, it has the ...

Researchers claims to have developed a method for producing a layer of graphene on a silicon carbide (SiC) wafer to form a semiconductor with a band gap of 0.6 eV and with room temperature electron ...