Abstract: A novel reconfigurable logic gate (RLG) utilizing one ferroelectric tunnel field-effect transistor (FeTFET) is proposed for the first time. By leveraging the symmetric ambipolar current of ...
Abstract: For 3D NAND memory, with continuous word line (WL) pitch scaling, deteriorated WL interference and the impact on triple-level cell (TLC) operation window are anticipated. However, as the WL ...
AI-driven memory and storage shortages may push DRAM up 50%+ in 2026, aiding Micron, Sandisk, Nvidia and more while ...
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