TT Electronics, a UK-based provider of engineered electronics based in Woking, announced the launch of two new product series: FMW fusible MELF wirewound resistors and HSMW high surge MELF wirewound ...

ROHM has expanded its range of surface-mount near-infrared (NIR) LEDs with six new compact top-view models designed for applications including VR/AR devices, industrial optical sensors, and human ...

Arteris, Inc., a provider of system IP for semiconductor development, announced an expansion of its multi-die solution to support chiplet-based designs. The solution addresses the increasing ...

Semiconductor packaging plays a critical role in chip making by serving as the bridge between the fabricated semiconductor die (the core of the chip) and its practical use in electronic systems. After ...

Samsung held a tool-in ceremony for its new semiconductor research and development complex (NRD-K) at its Giheung campus, marking a significant leap into the future. About 100 guests, including those ...

Samsung Electronics has begun mass production of its one-terabit (Tb) quad-level cell (QLC) 9th-generation vertical NAND (V-NAND). With the industry’s first mass production of QLC 9th-generation ...

Toshiba announces the Mx11 family of helium-sealed high-capacity HDDs. The Mx11 family includes the MG11 Series, which provides capacities of up to 24TB using conventional magnetic recording (CMR), ...

ABI Research said the chipset revenues from AI-dedicated silicon for IoT-focused applications reaching over US$7.3 billion by 2030. The trend driving this growth is due to embedded chipset vendors ...

STMicroelectronics has made available the EVLDRIVE101-HPD (High Power Density) motor-drive reference design featuring a 3-phase gate driver, STM32G0 microcontroller, and 750W power stage on a circular ...

SK hynix has developed the Zoned UFS, or ZUFS1 4.0, a mobile NAND solution product for on-device AI applications. SK hynix said that the ZUFS 4.0, optimized for on-device AI from mobile devices such ...

Littelfuse launched IX4352NE, a Low-side SiC MOSFET and IGBT Gate Driver IC specifically designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in ...