Abstract: This paper introduces a $4.2 ~\text{Gb} / \mathrm{s} 5^{\text {th }}$ generation F-chip operating at a 1.1 V supply voltage. To achieve high-speed performance even in high-capacity memory ...
Abstract: Systematic study of magnetoresistive random access memory (MRAM) chip behavior under external magnetic field exposure is important from security and reliability viewpoint. Some of the errors ...
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