Abstract: The capacitance of the gate oxide is a crucial parameter to model the performance of MOSFETs. The traditional expression used to compute it stems from the parallel-plate capacitor formula.

A new technical paper titled “Vertical FET Optimization at Angstrom Nodes: A Comparative Study With Horizontal FET” was published by researchers at POSTECH and Georgia Institute of Technology. “For ...

ROHM is advancing 4th-gen SiC MOSFETs while prepping for future tech. Credit: RidhamSupriyanto/Shutterstock. ROHM’s 4th generation silicon carbide (SiC) metal-oxide ...

Researchers produce tiny transistors with high performance and reliability through the use of an innovative material and design. (Nanowerk News) Hailed as one of the greatest inventions of the 20th ...

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Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...

NoMIS Power Corp. has claimed significant reductions in on-resistance for its next-generation platform of 1.2-kV planar SiC MOSFETs. This was achieved by optimizing device design and process steps, ...

SILICON CARBIDE is transforming the future of semiconductor devices. Strengths of this wide bandgap matertial include low conduction and switching losses, a high blocking-voltage capability, fast ...

SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...

A new technical paper titled “First Demonstration of High-Performance and Extremely Stable W-Doped In 2 O 3 Gate-All-Around (GAA) Nanosheet FET” was published by researchers at Georgia Institute of ...