Leveraging ST’s robust silicon-on-insulator (SOI) process, the SRK1004 can control the MOSFET in either low-side or high-side ...

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...

STMicroelectronics’ SRK1004 synchronous-rectifier controllers save space and increase efficiency in the secondary side of active-clamp ...

OMRON Electronic Components Europe has announced new G3VM MOSFET relays with a tiny footprint, low output capacitance, and fast response for designers tackling demanding applications, including ...

Alpha and Omega Semiconductor Limited ("AOS") (Nasdaq: AOSL) today announced that the company will release its financial results for the fiscal second quarter ended December 31, 2025 on Thursday, ...

Mitsubishi Electric has announced that it will shortly start shipping samples of four new trench SiC-MOSFET bare dies ...

Mitsubishi Electric has announced that it will shortly start shipping samples of four new trench SiC-MOSFET bare dies ...

OMRON Electronic Components Europe has launched a new range of MOSFET relays for test and measurement, designed to help ...

OMRON Electronic Components Europe has introduced a new range of G3VM MOSFET relays designed to deliver faster switching ...

Abstract: The split-gate trench (SGT) MOSFET is a vertical power device having a separate field plate (FP) inside a deep trench. This design increases the breakdown voltage (BV) via the reduced ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of ...