Abstract: An ON-chip vacuum transistor based on electron emission from SiOx tunneling diodes formed at the side surface of a thin SiO2 film is proposed, where electrons transport in the vacuum channel ...
Abstract: We present a systematic study on the design of a novel GaN/AlGaN/GaN super-heterojunction Schottky diode. Through physics-based TCAD simulation, we discuss three important design aspects: 1) ...
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