During their keynote at FMS, Toshiba also announced that they’ll be producing the world’s first 8-stack and 16-stack TSV (Through-Silicon-Via) NAND packages. Thanks to TSV NAND stacking, Toshiba is ...

A new research paper titled “Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages” was published by researchers at Sungkyunkwan University and Korea University.

Samsung is reportedly on the verge of announcing its next-generation V-NAND technology for SSDs, which will feature 290 layers for the first time. The company currently offers 236-layer V-NAND, so ...

Samsung Electronics is reportedly reducing NAND flash production like other competitors, which could lead to higher product prices. Related companies are fiercely competing in stacking (layer count ...

TOKYO--(BUSINESS WIRE)--Toshiba Corporation (TOKYO:6502) today announced the development of the world’s first *1 16-die (max.) stacked NAND flash memory utilizing Through Silicon Via (TSV) technology.

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...

NAND flash memory is a key enabler in today’s systems, but it’s a difficult business. NAND suppliers require deep pockets and strong technology to survive in the competitive landscape. And going ...

Yangtze Memory Technologies Co. (YMTC) has quietly started to ship its 5th-Gen 3D NAND memory with 294 layers in total as ...

Check out more coverage of the 2022 Flash Memory Summit. Micron has started mass production of its most advanced triple-level-cell (TLC) 3D NAND chips made up of 232 layers of memory cells, pulling ...